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Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to 25°C
V GS = 0V, V DS = 60V,
V GS = ±20V, V DS = 0V
75
70
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
? V GS(th)
? T J
r DS(on)
g FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
V GS = 10V, I D = 6A
V GS = 10V, I D = 6A, T J = 125°C
V DD = 10V, I D = 6A
2.5
3.8
-10
37
63
13
4.5
47
80
V
mV/°C
m ?
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 40V, V GS = 0V,
f = 1MHz
f = 1MHz
615
75
35
1.5
815
105
40
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
9
17
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 40V, I D = 6A,
V GS = 10V, R GEN = 6 ?
V DD = 40V
I D = 6A
3
13
3
11
4
3
10
22
10
15
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 2.6A
V GS = 0V, I S = 6A
I F = 6A, di/dt = 100A/ μ s
(Note 2)
(Note 2)
0.78
0.83
25
17
1.2
1.3
41
32
V
ns
nC
Notes :
1: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ JA is determined by the user’s board design.
a . 40°C/W when mounted on a 1 in 2 pad of 2 oz copper
b . 62.5°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3: Starting T J = 25 ° C , L = 3mH , I AS = 6A , V DD = 75V , V GS = 10V.
?2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
2
www.fairchildsemi.com
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